发明授权
- 专利标题： Non-volatile single-event upset tolerant latch circuit
- 专利标题（中）： 非易失性单事件容错锁存电路
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申请号： US12525458申请日： 2008-11-25
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公开(公告)号： US07965541B2公开(公告)日： 2011-06-21
- 发明人: Bin Li , John C. Rodgers , Nadim F. Haddad
- 申请人： Bin Li , John C. Rodgers , Nadim F. Haddad
- 申请人地址： US NH Nashua US MI Rochester Hills
- 专利权人： BAE Systems Information and Electronic Systems Integration Inc.,Ovonyx, Inc.
- 当前专利权人： BAE Systems Information and Electronic Systems Integration Inc.,Ovonyx, Inc.
- 当前专利权人地址： US NH Nashua US MI Rochester Hills
- 代理机构： Dillon & Yudell, LLP
- 代理商 Antony P. Ng; Daniel J. Long
- 国际申请： PCT/US2008/084714 WO 20081125
- 国际公布： WO2009/070595 WO 20090604
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A non-volatile single-event upset (SEU) tolerant latch is disclosed. The non-volatile SEU tolerant latch includes a first and second inverters connected to each other in a cross-coupled manner. The gates of transistors within the first inverter are connected to the drains of transistors within the second inverter via a first feedback resistor. Similarly, the gates of transistors within the second inverter are connected to the drains of transistors within the first inverter via a second feedback resistor. The non-volatile SEU tolerant latch also includes a pair of chalcogenide memory elements connected to the inverters for storing information.
公开/授权文献
- US20100027321A1 Non-Volatile Single-Event Upset Tolerant Latch Circuit 公开/授权日：2010-02-04
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