发明授权
US07965548B2 Systems and devices including memory resistant to program disturb and methods of using, making, and operating the same
有权
包括对程序干扰的记忆的系统和设备以及使用，制造和操作它们的方法
- 专利标题： Systems and devices including memory resistant to program disturb and methods of using, making, and operating the same
- 专利标题（中）： 包括对程序干扰的记忆的系统和设备以及使用，制造和操作它们的方法
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申请号： US12705917申请日： 2010-02-15
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公开(公告)号： US07965548B2公开(公告)日： 2011-06-21
- 发明人: Satoru Tamada
- 申请人： Satoru Tamada
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Fletcher Yoder
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
Disclosed are methods, systems and devices, one such device being a memory device configured to concurrently assert a first pulse pattern through a plurality of conductors disposed on both a source side and a drain side of a floating-gate transistor, wherein a source side of the first pulse pattern has a different median voltage than a drain side of the first pulse pattern.
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