Invention Grant
US07967944B2 Method of plasma load impedance tuning by modulation of an unmatched low power RF generator
有权
通过调制不匹配的低功率RF发生器的等离子体负载阻抗调谐方法
- Patent Title: Method of plasma load impedance tuning by modulation of an unmatched low power RF generator
- Patent Title (中): 通过调制不匹配的低功率RF发生器的等离子体负载阻抗调谐方法
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Application No.: US12129244Application Date: 2008-05-29
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Publication No.: US07967944B2Publication Date: 2011-06-28
- Inventor: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: C23F1/00
- IPC: C23F1/00
Abstract:
A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into first and second components thereof, and changing the power level of the stabilization RF power as a function one of the components of changes in load impedance.
Public/Granted literature
- US20090295296A1 METHOD OF PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR Public/Granted day:2009-12-03
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