发明授权
- 专利标题: Method and apparatus for chalcogenide device formation
- 专利标题(中): 硫族化物装置形成的方法和装置
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申请号: US11977520申请日: 2007-10-25
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公开(公告)号: US07967994B2公开(公告)日: 2011-06-28
- 发明人: Tyler Lowrey , Stanford R. Ovshinsky
- 申请人: Tyler Lowrey , Stanford R. Ovshinsky
- 申请人地址: US MI Troy
- 专利权人: Ovonyx, Inc.
- 当前专利权人: Ovonyx, Inc.
- 当前专利权人地址: US MI Troy
- 代理商 Kevin L. Bray
- 主分类号: C03C25/68
- IPC分类号: C03C25/68
摘要:
Chalcogenide devices are delineated and sidewalls of the devices are sealed, in an anaerobic and/or anhydrous environment environment. Throughout the delineation and sealing steps, and any intervening steps, the sidewalls are not exposed to oxygen or water. In an illustrative embodiment, a cluster tool includes an etching tool and a sealing/deposition tool configured to etch and seal the chalcogenide devices and to maintain the devices in an anaerobic and/or anhydrous environment throughout the process.
公开/授权文献
- US20090111212A1 Method and apparatus for chalcogenide device formation 公开/授权日:2009-04-30
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