发明授权
US07968439B2 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
有权
等离子体浸没离子注入方法，在室内表面上使用纯的或接近纯的硅调味层
- 专利标题： Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
- 专利标题（中）： 等离子体浸没离子注入方法，在室内表面上使用纯的或接近纯的硅调味层
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申请号： US12069424申请日： 2008-02-06
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公开(公告)号： US07968439B2公开(公告)日： 2011-06-28
- 发明人: Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
- 申请人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理商 Robert M. Wallace
- 主分类号： H01L21/425
- IPC分类号： H01L21/425
摘要：
Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.