Invention Grant
US07968913B2 CMOS compatable fabrication of power GaN transistors on a <100> silicon substrate
有权
在<100>硅衬底上的CMOS兼容制造功率GaN晶体管
- Patent Title: CMOS compatable fabrication of power GaN transistors on a <100> silicon substrate
- Patent Title (中): 在<100>硅衬底上的CMOS兼容制造功率GaN晶体管
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Application No.: US12315931Application Date: 2008-12-08
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Publication No.: US07968913B2Publication Date: 2011-06-28
- Inventor: Peter J. Hopper , William French
- Applicant: Peter J. Hopper , William French
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Jurgen K. Vollrath
- Main IPC: H01L29/778
- IPC: H01L29/778
Abstract:
In an AlGaN channel transistor formed on a orientation silicon wafer, a hole with walls slanted at 54 degrees is etched into the silicon to provide a orientation substrate surface for forming the AlGaN channel transistor.
Public/Granted literature
- US20100140663A1 CMOS Compatable fabrication of power GaN transistors on a <100> silicon substrate Public/Granted day:2010-06-10
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