The present invention provides a semiconductor apparatus having high reliability with respect to a withstand voltage, leakage characteristics, etc. by disposing a structure of preventing stress occurring by metal wiring from directly acting on a trench relating to the semiconductor apparatus having a trench gate. The semiconductor apparatus of the invention includes a semiconductor substrate including a semiconductor layer having a predetermined impurity concentration, a trench gate formed in the semiconductor layer by filling a stripe-shaped trench by a conductor layer on which surface and interface a gate oxide film is formed, an insulating film covering a surface of the semiconductor layer and having a source contact opening, a source region formed in the semiconductor layer, a source electrode formed on the surface of the semiconductor layer so as to electrically connect to the source region through the source contact opening, a gate peripheral wiring connected to the trench gate at a peripheral edge part of the trench gate, a gate electrode separately formed from the source electrode, formed above the surface of the semiconductor layer and connected to the gate peripheral wiring and a drain electrode formed on an surface of the semiconductor substrate opposite to the surface of the semiconductor layer, wherein the trench gate is formed so as to avoid a corner portion of the source contact opening of the source electrode.