- 专利标题： Gate in semiconductor device and method of fabricating the same
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申请号： US12318503申请日： 2008-12-30
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公开(公告)号： US07968955B2公开(公告)日： 2011-06-28
- 发明人: Jae-Geun Oh , Jin-Ku Lee , Min-Ae Ju
- 申请人： Jae-Geun Oh , Jin-Ku Lee , Min-Ae Ju
- 申请人地址： KR Icheon-si, Gyeonggi-do
- 专利权人： hynix Semiconductor Inc.
- 当前专利权人： hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si, Gyeonggi-do
- 代理机构： Lowe Hauptman Ham & Berner LLP
- 优先权： KR10-2008-0097242 20081002
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/425
摘要：
A gate of a semiconductor device includes a substrate, and a polysilicon layer over the substrate, wherein the polysilicon layer is doped with first conductive type impurities having a concentration that decreases when receding from the substrate and counter-doped with second conductive type impurities having a concentration that increases when receding from the substrate.
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