发明授权
- 专利标题： Band gap circuit generating a plurality of internal voltage references
- 专利标题（中）： 带隙电路产生多个内部电压基准
-
申请号： US11987936申请日： 2007-12-06
-
公开(公告)号： US07969136B2公开(公告)日： 2011-06-28
- 发明人: Khil-Ohk Kang , Sang-Jin Byeon
- 申请人： Khil-Ohk Kang , Sang-Jin Byeon
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2007-0055936 20070608
- 主分类号： G05F3/30
- IPC分类号： G05F3/30
摘要：
A semiconductor device includes: a first reference voltage generator for generating a first reference voltage; a first band gap circuit for dividing a voltage at a second reference voltage output node to produce a first and a second band gap voltages having a property relative to temperature variations; a first comparator for receiving the first reference voltage as a bias input and comparing the first band gap voltage with the second band gap voltage; and a first driver for pull-up driving the second reference voltage output node in response to an output signal of the first comparator.
公开/授权文献
- US20080303504A1 Semiconductor device 公开/授权日：2008-12-11
信息查询
IPC分类:
