发明授权
- 专利标题: Method of manufacturing a semiconductor device
- 专利标题(中): 制造半导体器件的方法
-
申请号: US12400474申请日: 2009-03-09
-
公开(公告)号: US07971351B2公开(公告)日: 2011-07-05
- 发明人: Yoshimi Takahashi , Masazumi Amagai
- 申请人: Yoshimi Takahashi , Masazumi Amagai
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 代理商 Yingsheng Tung; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 优先权: JP2005-187137 20050627; JP2005-187175 20050627
- 主分类号: H05K3/30
- IPC分类号: H05K3/30
摘要:
The objective of the invention is to provide a method of manufacturing a semiconductor device that allows individual molding of plural semiconductor chips carried on a surface of the substrate. It includes the following process steps: a process step in which plural semiconductor elements 102 are arranged on the surface of substrate 100; a process step in which the inner side of substrate 102 is fixed on lower die 130; a process step in which liquid resin 114 is supplied from nozzle 112 onto each of the semiconductor elements in order to cover at least a portion of each of semiconductor chips 102; a process step in which the upper die having plural cavities 144 formed in one surface is pressed onto the lower die, and liquid resin 114 is molded at a prescribed temperature by means of plural cavities 144; and a process step in which cavities 144 of upper die 140 are detached from the substrate, and plural molding resin portions are formed individually.
公开/授权文献
- US20090176336A1 Method of Manufacturing a Semiconductor Device 公开/授权日:2009-07-09
信息查询