发明授权
- 专利标题： Manufacturing method of integrated circuit device including thin film transistor
- 专利标题（中）： 包括薄膜晶体管的集成电路器件的制造方法
-
申请号： US11442225申请日： 2006-05-30
-
公开(公告)号： US07972910B2公开(公告)日： 2011-07-05
- 发明人: Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
- 申请人： Koji Dairiki , Naoto Kusumoto , Takuya Tsurume
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2005-164605 20050603
- 主分类号： H01L21/46
- IPC分类号： H01L21/46
摘要：
It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.
公开/授权文献
信息查询
IPC分类:
