发明授权
- 专利标题： Non-volatile memory device and method of manufacturing the same
- 专利标题（中）： 非易失性存储器件及其制造方法
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申请号： US11605317申请日： 2006-11-29
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公开(公告)号： US07972923B2公开(公告)日： 2011-07-05
- 发明人: Jung-Hyun Park , Jung-Geun Jee , Hyoeng-Ki Kim , Yong-Woo Hyung , Won-Jun Jang
- 申请人： Jung-Hyun Park , Jung-Geun Jee , Hyoeng-Ki Kim , Yong-Woo Hyung , Won-Jun Jang
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2006-0101158 20061018
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A semiconductor device may include a tunnel insulating layer disposed on an active region of a substrate, field insulating patterns disposed in surface portions of the substrate to define the active region, each of the field insulating patterns having an upper recess formed at an upper surface portion thereof, a stacked structure disposed on the tunnel insulating layer, and impurity diffusion regions disposed at surface portions of the active region adjacent to the stacked structure.