Invention Grant
US07972936B1 Method of fabrication of heterogeneous integrated circuits and devices thereof 有权
异质集成电路的制造方法及其装置

Method of fabrication of heterogeneous integrated circuits and devices thereof
Abstract:
A heterogeneous integrated circuit and method of making the same. An integrated circuit includes a surrogate substrate including a material selected from the group consisting of Group II, Group III, Group IV, Group V, and Group VI materials and their combinations; at least one active semiconductor device including a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials; and at least one transferred semiconductor device including a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials. The at least one active semiconductor device and the at least one transferred device are interconnected.
Information query
Patent Agency Ranking
0/0