发明授权
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
-
申请号: US12117630申请日: 2008-05-08
-
公开(公告)号: US07973314B2公开(公告)日: 2011-07-05
- 发明人: Seung-Jin Yang , Jeong-Uk Han , Yong-Tae Kim , Yong-Suk Choi , Hyok-Ki Kwon
- 申请人: Seung-Jin Yang , Jeong-Uk Han , Yong-Tae Kim , Yong-Suk Choi , Hyok-Ki Kwon
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2007-0046615 20070514
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L31/036 ; H01L31/112
摘要:
A semiconductor device has a first semiconductor layer including a first circuit, a second semiconductor layer disposed on the first semiconductor layer and having a second circuit, and a via extending through portions of the first and second semiconductor layers and by which the first and second circuits are electrically connected. One of the circuits is a logic circuit and the other of the circuits is a memory circuit. The semiconductor device is manufactured by fabricating transistors of the logic and memory circuits on respective substrates, stacking the substrates, and electrically connecting the logic and memory circuits with a via.
公开/授权文献
信息查询
IPC分类: