Invention Grant
- Patent Title: Thick field oxide termination for trench schottky device
- Patent Title (中): 沟槽肖特基器件的厚场氧化物终端
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Application No.: US10936162Application Date: 2004-09-08
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Publication No.: US07973381B2Publication Date: 2011-07-05
- Inventor: Davide Chiola
- Applicant: Davide Chiola
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A schottky diode of the trench variety which includes a trench termination having a thick insulation layer that is thicker than the insulation layer inside the trenches in its active region.
Public/Granted literature
- US20050062124A1 Thick field oxide termination for trench schottky device and process for manufacture Public/Granted day:2005-03-24
Information query
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