Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11527405Application Date: 2006-09-27
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Publication No.: US07973410B2Publication Date: 2011-07-05
- Inventor: Yoshiyuki Kurokawa
- Applicant: Yoshiyuki Kurokawa
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-298244 20051012
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
Since a power source voltage is generated from a communication signal in a wireless chip, there is a risk that a large amount of voltage be generated in the wireless chip to electrically destroy a circuit in the case of supplying a strong communication signal. Therefore, the present invention is made with an aim to provide a wireless chip having resistance to a strong communication signal. A wireless chip of the present invention has an element in which a power source wire and a grounding wire are electrically short-circuited if a power source voltage exceeds a voltage at which an electric circuit is destroyed, i.e., exceeds the specified voltage range. Accordingly, a wireless chip of the present invention has resistance to a strong communication signal.
Public/Granted literature
- US20070080374A1 Semiconductor device Public/Granted day:2007-04-12
Information query
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