Invention Grant
- Patent Title: Verification circuits and methods for phase change memory array
- Patent Title (中): 相变存储器阵列的验证电路和方法
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Application No.: US12485720Application Date: 2009-06-16
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Publication No.: US07974122B2Publication Date: 2011-07-05
- Inventor: Wen-Pin Lin , Shyh-Shyuan Sheu , Pei-Chia Chiang
- Applicant: Wen-Pin Lin , Shyh-Shyuan Sheu , Pei-Chia Chiang
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Priority: TW97151378A 20081230
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A verification circuit for a phase change memory array is provided. A sensing unit senses a sensing voltage from a memory cell of the phase change memory array according to an enable signal. A comparator generates a comparing signal according to the sensing voltage and a reference voltage, so as to indicate whether the memory cell is in a reset state. A control unit generates a control signal according to the enable signal. An operating unit generates a first signal according to the control signal, so as to indicate whether the comparator is active. An adjustment unit provides a writing current to the cell, and increases the writing current according to the control signal until the comparing signal indicates that the memory cell is in a reset state.
Public/Granted literature
- US20100165720A1 VERIFICATION CIRCUITS AND METHODS FOR PHASE CHANGE MEMORY ARRAY Public/Granted day:2010-07-01
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