Invention Grant
US07974326B2 Hybrid laser diode for single mode operation and method of fabricating the same
失效
用于单模操作的混合激光二极管及其制造方法
- Patent Title: Hybrid laser diode for single mode operation and method of fabricating the same
- Patent Title (中): 用于单模操作的混合激光二极管及其制造方法
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Application No.: US12118551Application Date: 2008-05-09
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Publication No.: US07974326B2Publication Date: 2011-07-05
- Inventor: Young-Ahn Leem , Ki-Soo Kim , Jung-Ho Song , O-Kyun Kwon , Gyung-Ock Kim
- Applicant: Young-Ahn Leem , Ki-Soo Kim , Jung-Ho Song , O-Kyun Kwon , Gyung-Ock Kim
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Priority: KR10-2007-0128857 20071212
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.
Public/Granted literature
- US20090154517A1 HYBRID LASER DIODE FOR SINGLE MODE OPERATION AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-06-18
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