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发明授权
US07974595B2 Methodology for assessing degradation due to radio frequency excitation of transistors 有权
评估由于晶体管射频激发引起的退化的方法

Methodology for assessing degradation due to radio frequency excitation of transistors
摘要：
One embodiment relates to an on-chip power amplifier (PA) test circuit. In one embodiment, a PA test circuit comprises a controllable oscillator (CO) configured to generate a radio frequency (RF) signal, a parallel resonant circuit tuned to the radio frequency, a pre-power amplifier (PPA) coupled to the CO and the parallel resonant circuit, the PPA configured to amplify and drive the RF signal from an output of the PPA into a load. The test circuit may further comprise a first transmission gate configured to couple the RF signal from the CO to an input of the PPA. One testing methodology for a PA test circuit comprises stressing the PPA with an RF signal, measuring a characteristic of the PPA, determining stress degradation from the characteristic measurements, and repeating the stressing and characteristic measurements until a maximum stress degradation is achieved or a maximum stress has been applied.
摘要（中）：

一个实施例涉及片上功率放大器（PA）测试电路。 在一个实施例中，PA测试电路包括被配置为产生射频（RF）信号的可控振荡器（CO），调谐到射频的并联谐振电路，耦合到CO的预功率放大器（PPA）和 并联谐振电路，PPA被配置为放大并将RF信号从PPA的输出驱动到负载中。 测试电路还可以包括被配置为将来自CO的RF信号耦合到PPA的输入的第一传输门。 PA测试电路的一种测试方法包括用RF信号强迫PPA，测量PPA的特性，从特征测量确定应力退化，并重复应力和特征测量，直到达到最大应力退化或最大应力 已被应用。

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