Provided is a compound light emitting device which facilitates easy connection of power supply lines, and has a high emission intensity in-plane uniformity. The light emitting device includes a first-conduction-type cladding layer, active layer structure, and second-conduction-type cladding layer each containing a III-V compound semiconductor. The first-conduction-type cladding layer and second-conduction-type cladding layer sandwich the active layer structure. The light emitting device includes a first-conduction-type-side electrode (7) for injecting carriers into the first-conduction-type cladding layer, and a second-conduction-type-side electrode (6) for injecting carriers into the second-conduction-type cladding layer. The first-conduction-type-side electrode (7) has an opening (7p). The second-conduction-type-side electrode (6) has a main-electrode-portion (6-0) partially surrounded by the first-conduction-type-side electrode (7), and extracting portions (6-1, 6-2) for extracting the main-electrode-portion (6-0) outside the first-conduction-type-side electrode (7) though the opening (7p). The main-electrode-portion (6-0) is a part of a constant-width figure. The interval between the outer edge of the main-electrode-portion (6-0) and the inner edge of the first-conduction-type-side electrode (7) is almost constant.