发明授权
- 专利标题： Semiconductor device and method of manufacturing semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12497531申请日： 2009-07-02
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公开(公告)号： US07977771B2公开(公告)日： 2011-07-12
- 发明人: Shingo Higuchi
- 申请人： Shingo Higuchi
- 申请人地址： JP Kyoto
- 专利权人： Rohm Co., Ltd.
- 当前专利权人： Rohm Co., Ltd.
- 当前专利权人地址： JP Kyoto
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2008-175581 20080704
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L23/04 ; H01L23/48
摘要：
The semiconductor device according to the present invention includes: a semiconductor chip including a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire; a resin layer stacked on the semiconductor chip and provided with a through-hole in a position opposed to a portion of the wire facing the opening; and a pad formed on a peripheral portion of the through-hole in the resin layer and in the through-hole so that an external connection terminal is arranged on the surface thereof. The peripheral portion of the resin layer is formed more thickly than the remaining portion of the resin layer other than the peripheral portion.