Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US12206907Application Date: 2008-09-09
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Publication No.: US07977932B2Publication Date: 2011-07-12
- Inventor: Fukashi Morishita
- Applicant: Fukashi Morishita
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2007-249525 20070926
- Main IPC: G05F3/16
- IPC: G05F3/16

Abstract:
The present invention provides a regulator circuit that can fast-respond to a variation in load current and supply a sufficient drive current so as to be capable of generating a stable internal source voltage. The regulator circuit includes a preamplifier circuit that detects and amplifies a different between a reference voltage and an internal source voltage, a clamp circuit that limits the amplitude of an output of the preamplifier circuit, a main amplifier circuit that amplifies the amplitude-limited output of the preamplifier circuit, and a driver circuit that outputs the internal source voltage according to the output of the main amplifier. Even though the internal source voltage varies abruptly, the regulator circuit does not oscillate owing to the effect of the clamp circuit.
Public/Granted literature
- US20090079407A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2009-03-26
Information query
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