发明授权
US07978490B2 Content addressable memory cell and content addressable memory using phase change memory
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内容可寻址存储单元和内容可寻址存储器,使用相变存储器
- 专利标题: Content addressable memory cell and content addressable memory using phase change memory
- 专利标题(中): 内容可寻址存储单元和内容可寻址存储器,使用相变存储器
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申请号: US11892851申请日: 2007-08-28
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公开(公告)号: US07978490B2公开(公告)日: 2011-07-12
- 发明人: Kwang-jin Lee , Du-eung Kim
- 申请人: Kwang-jin Lee , Du-eung Kim
- 申请人地址: KR Gyeonngi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonngi-do
- 代理机构: Harness, Dickey & Pierce, PLC
- 优先权: KR10-2006-0090705 20060919
- 主分类号: G11C15/00
- IPC分类号: G11C15/00
摘要:
According to an example embodiment, a CAM cell included in a CAM may include a phase change memory device, a connector, and/or a developer. The phase change memory device may be configured to store data. The phase change memory device may have a resistance that may be varied according to the logic level of the stored data. The connector may be configured to control writing data to the phase change memory device and reading data from the phase change memory device. The developer may be configured to control reading data from the phase change memory device in a search mode in which the data stored in the phase change memory device is compared to the search data.
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