发明授权
US07978508B2 Reduction of drift in phase-change memory via thermally-managed programming
有权
通过热管理编程减少相变存储器中的漂移
- 专利标题: Reduction of drift in phase-change memory via thermally-managed programming
- 专利标题(中): 通过热管理编程减少相变存储器中的漂移
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申请号: US12356236申请日: 2009-01-20
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公开(公告)号: US07978508B2公开(公告)日: 2011-07-12
- 发明人: Wolodymyr Czubatyj
- 申请人: Wolodymyr Czubatyj
- 申请人地址: US MI Troy
- 专利权人: Ovonyx, Inc.
- 当前专利权人: Ovonyx, Inc.
- 当前专利权人地址: US MI Troy
- 代理商 Kevin L. Bray
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A method of programming a phase-change material. The method includes providing a transformation pulse to the phase-change material, where the transformation pulse includes a programming waveform and a conditioning waveform. The programming waveform provides sufficient energy to alter the structural state of the phase-change material. In one embodiment, the programming waveform alters the volume fractions of crystalline and amorphous phase regions within the phase-change material. The conditioning waveform provides sufficient energy to heat the phase-change material to a temperature above the ambient temperature but below the crystallization temperature of the phase-change material. The method programs the phase-change material to a state that exhibits a reduced time variation of resistance.
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