发明授权
US07978508B2 Reduction of drift in phase-change memory via thermally-managed programming 有权
通过热管理编程减少相变存储器中的漂移

  • 专利标题: Reduction of drift in phase-change memory via thermally-managed programming
  • 专利标题(中): 通过热管理编程减少相变存储器中的漂移
  • 申请号: US12356236
    申请日: 2009-01-20
  • 公开(公告)号: US07978508B2
    公开(公告)日: 2011-07-12
  • 发明人: Wolodymyr Czubatyj
  • 申请人: Wolodymyr Czubatyj
  • 申请人地址: US MI Troy
  • 专利权人: Ovonyx, Inc.
  • 当前专利权人: Ovonyx, Inc.
  • 当前专利权人地址: US MI Troy
  • 代理商 Kevin L. Bray
  • 主分类号: G11C11/00
  • IPC分类号: G11C11/00
Reduction of drift in phase-change memory via thermally-managed programming
摘要:
A method of programming a phase-change material. The method includes providing a transformation pulse to the phase-change material, where the transformation pulse includes a programming waveform and a conditioning waveform. The programming waveform provides sufficient energy to alter the structural state of the phase-change material. In one embodiment, the programming waveform alters the volume fractions of crystalline and amorphous phase regions within the phase-change material. The conditioning waveform provides sufficient energy to heat the phase-change material to a temperature above the ambient temperature but below the crystallization temperature of the phase-change material. The method programs the phase-change material to a state that exhibits a reduced time variation of resistance.
信息查询
0/0