Invention Grant
US07981719B2 N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
有权
N,N'-二(芳基烷基)取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料
- Patent Title: N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
- Patent Title (中): N,N'-二(芳基烷基)取代的萘基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料
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Application No.: US12474533Application Date: 2009-05-29
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Publication No.: US07981719B2Publication Date: 2011-07-19
- Inventor: Deepak Shukla , Shelby F. Nelson , Diane C. Freeman
- Applicant: Deepak Shukla , Shelby F. Nelson , Diane C. Freeman
- Applicant Address: US NY Rochester
- Assignee: Eastman Kodak Company
- Current Assignee: Eastman Kodak Company
- Current Assignee Address: US NY Rochester
- Agent J. Lanny Tucker
- Main IPC: H01L51/40
- IPC: H01L51/40

Abstract:
A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
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