发明授权
- 专利标题： Method of fabricating a memory cell
- 专利标题（中）： 制造存储单元的方法
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申请号： US12039744申请日： 2008-02-29
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公开(公告)号： US07981743B2公开(公告)日： 2011-07-19
- 发明人: Mao-Quan Chen , Ching-Nan Hsiao , Chung-Lin Huang
- 申请人： Mao-Quan Chen , Ching-Nan Hsiao , Chung-Lin Huang
- 申请人地址： TW Kueishan, Tao-Yuan Hsien
- 专利权人： Nanya Technology Corp.
- 当前专利权人： Nanya Technology Corp.
- 当前专利权人地址： TW Kueishan, Tao-Yuan Hsien
- 代理商 Winston Hsu; Scott Margo
- 优先权： TW96136920A 20071002
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/302 ; H01L21/461
摘要：
The memory cell of the present invention has two independent storage regions embedded into two opposite sidewalls of the control gate respectively. In this way, the data storage can be more reliable. Other features of the present invention are that the thickness of the dielectric layers is different, and the two independent storage regions are formed on opposite bottom sides of the opening by the etching process and form a shape like a spacer. The advantage of the aforementioned method is that the fabricating process is simplified and the difficulty of self-alignment is reduced.
公开/授权文献
- US20090087544A1 METHOD OF FABRICATING A MEMORY CELL 公开/授权日：2009-04-02
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