发明授权
- 专利标题: Semiconductor component and method of manufacture
- 专利标题(中): 半导体元件及制造方法
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申请号: US12902130申请日: 2010-10-11
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公开(公告)号: US07981757B2公开(公告)日: 2011-07-19
- 发明人: Peter A. Burke , Sallie Hose , Sudhama C. Shastri
- 申请人: Peter A. Burke , Sallie Hose , Sudhama C. Shastri
- 申请人地址: US AZ Phoenix
- 专利权人: Semiconductor Components Industries, LLC
- 当前专利权人: Semiconductor Components Industries, LLC
- 当前专利权人地址: US AZ Phoenix
- 代理商 Rennie William Dover
- 主分类号: H01L21/02
- IPC分类号: H01L21/02
摘要:
A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.
公开/授权文献
- US20110027961A1 Semiconductor Component and Method of Manufacture 公开/授权日:2011-02-03
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