发明授权
- 专利标题： Method of forming a metal directly on a conductive barrier layer by electrochemical deposition using an oxygen-depleted ambient
- 专利标题（中）： 通过使用耗氧环境的电化学沉积在导电阻挡层上直接形成金属的方法
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申请号： US12045907申请日： 2008-03-11
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公开(公告)号： US07981793B2公开(公告)日： 2011-07-19
- 发明人: Axel Preusse , Charlotte Emnet , Susanne Wehner
- 申请人： Axel Preusse , Charlotte Emnet , Susanne Wehner
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102007041213 20070831
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
By suppressing the presence of free oxygen during a cleaning process and a subsequent electrochemical deposition of a seed layer, the quality of a corresponding interface between the barrier material and the seed layer may be enhanced, thereby also improving performance and the characteristics of the finally obtained metal region. Thus, by identifying free oxygen as a main source for negatively affecting the characteristics of metals during a “direct on barrier” plating process, efficient strategies have been developed and are disclosed herein to provide a reliable technique for volume production of sophisticated semiconductor devices.
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