- 专利标题: TFT substrate and method for manufacturing TFT substrate
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申请号: US12089260申请日: 2006-10-02
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公开(公告)号: US07982215B2公开(公告)日: 2011-07-19
- 发明人: Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka
- 申请人: Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka , Tokie Tanaka, legal representative
- 申请人地址: JP Tokyo
- 专利权人: Idemitsu Kosan Co., Ltd.
- 当前专利权人: Idemitsu Kosan Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Millen, White, Zelano & Branigan, P.C.
- 优先权: JP2005-292823 20051005; JP2005-349826 20051202; JP2005-356563 20051209; JP2005-357034 20051209; JP2005-363150 20051216; JP2006-022849 20060131
- 国际申请: PCT/JP2006/319673 WO 20061002
- 国际公布: WO2007/040194 WO 20070412
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.
公开/授权文献
- US20100127253A1 TFT SUBSTRATE AND METHOD FOR MANUFACTURING TFT SUBSTRATE 公开/授权日:2010-05-27
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