发明授权
- 专利标题： Magnetic tunnel junction transistor
- 专利标题（中）： 磁隧道结晶体管
-
申请号： US12824168申请日： 2010-06-26
-
公开(公告)号： US07982249B2公开(公告)日： 2011-07-19
- 发明人: Daniel C. Worledge
- 申请人： Daniel C. Worledge
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Ido Tuchman; Vazken Alexanian
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A magnetic tunnel junction transistor. In a particular embodiment, the magnetic tunnel junction transistor includes a tunnel barrier having a high resistance when in a non-ferromagnetic, state and a low resistance when in a ferromagnetic state. The tunnel barrier is switchable between the non-ferromagnetic and the ferromagnetic states.
公开/授权文献
- US20100258849A1 MAGNETIC TUNNEL JUNCTION TRANSISTOR 公开/授权日：2010-10-14
信息查询
IPC分类:
