发明授权
- 专利标题： Semiconductor structure and method of making the same
- 专利标题（中）： 半导体结构及制作方法
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申请号： US12165587申请日： 2008-06-30
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公开(公告)号： US07982315B2公开(公告)日： 2011-07-19
- 发明人: Yinan Chen , Hsien-Wen Liu , Tzu-Ching Tsai
- 申请人： Yinan Chen , Hsien-Wen Liu , Tzu-Ching Tsai
- 申请人地址： TW Kueishan, Tao-Yuan Hsien
- 专利权人： Nanya Technology Corp.
- 当前专利权人： Nanya Technology Corp.
- 当前专利权人地址： TW Kueishan, Tao-Yuan Hsien
- 代理商 Winston Hsu; Scott Margo
- 优先权： TW97112830A 20080409
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A semiconductor device is provided. An amorphous silicon layer that acts as a UV blocking layer replaces a conventional silicon-rich oxide (SRO) layer or the super silicon-rich oxide (SSRO) layer. By doing this, the process window is increased. In addition, silicon nitride sidewall spacer is formed inside the contact hole to prevent charge loss.
公开/授权文献
- US20090256264A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING THE SAME 公开/授权日：2009-10-15
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