发明授权
- 专利标题： Wordline driving circuit of semiconductor memory device
- 专利标题（中）： 半导体存储器件的字线驱动电路
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申请号： US12157236申请日： 2008-06-09
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公开(公告)号： US07983097B2公开(公告)日： 2011-07-19
- 发明人: Jae-II Kim , Chang-Ho Do
- 申请人： Jae-II Kim , Chang-Ho Do
- 申请人地址： KR Kyoungki-Do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyoungki-Do
- 代理机构： Blakely, Sokoloff, Taylor & Zafman
- 优先权： KR10-2007-0111569 20071102
- 主分类号： G11C5/14
- IPC分类号： G11C5/14
摘要：
Wordline driving circuit of semiconductor memory device includes a bias generator configured to generate a threshold bias voltage for accessing data, an over-driver configured to increase the threshold bias voltage at an initial stage of a data accessing operation and a wordline driver configured to activate a wordline in response to the threshold bias voltage and a signal output from the over-driver.
公开/授权文献
- US20090116304A1 Wordline driving circuit of semiconductor memory device 公开/授权日：2009-05-07
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