发明授权
- 专利标题： Voltage stabilization circuit and semiconductor memory apparatus using the same
- 专利标题（中）： 稳压电路及使用其的半导体存储装置
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申请号： US12494815申请日： 2009-06-30
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公开(公告)号： US07983106B2公开(公告)日： 2011-07-19
- 发明人: Yong-Mi Kim , Jeong-Tea Hwang , Jeong-Hun Lee
- 申请人： Yong-Mi Kim , Jeong-Tea Hwang , Jeong-Hun Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Venable LLP
- 代理商 Jeffri A. Kaminski
- 优先权： KR10-2009-0042341 20090515
- 主分类号： G11C5/14
- IPC分类号： G11C5/14
摘要：
A voltage stabilization circuit of a semiconductor memory apparatus includes an operation speed detecting unit configured to detect an operation speed of the semiconductor memory apparatus to generate a detection signal, and a voltage line controlling unit configured to interconnect a first voltage line and a second voltage line in response to the detection signal.