发明授权
US07984408B2 Structures incorporating semiconductor device structures with reduced junction capacitance and drain induced barrier lowering 有权
结合了具有减小的结电容和漏极引起的屏障降低的半导体器件结构

Structures incorporating semiconductor device structures with reduced junction capacitance and drain induced barrier lowering
摘要:
Design structure embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes semiconductor device structures characterized by reduced junction capacitance and drain induced barrier lowering. The semiconductor device structure of the design structure includes a semiconductor layer and a dielectric layer disposed between the semiconductor layer and the substrate. The dielectric layer includes a first dielectric region with a first dielectric constant and a second dielectric region with a second dielectric constant that is greater than the first dielectric constant.
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