A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked in this order (a thin-film stacked body); first etching is performed to expose the first conductive film and form at least a pattern of the thin-film stacked body; second etching is performed to form a pattern of the first conductive film. The second etching is performed under a condition in which the first conductive film is side-etched. Further, after forming the patterns, an EL layer can be formed selectively by utilizing a depression and a projection due to the patterns.