发明授权
- 专利标题: Superconducting magnesium boride thin-film and process for producing the same
- 专利标题(中): 超导硼化镁薄膜及其制造方法
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申请号: US11909512申请日: 2006-03-22
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公开(公告)号: US07985713B2公开(公告)日: 2011-07-26
- 发明人: Yoshitomo Harada , Masahito Yoshizawa , Haruyuki Endo
- 申请人: Yoshitomo Harada , Masahito Yoshizawa , Haruyuki Endo
- 申请人地址: JP Morioka-shi
- 专利权人: Incorporated National University Iwate University
- 当前专利权人: Incorporated National University Iwate University
- 当前专利权人地址: JP Morioka-shi
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2005-089080 20050325
- 国际申请: PCT/JP2006/306397 WO 20060322
- 国际公布: WO2006/101255 WO 20060928
- 主分类号: C01B35/04
- IPC分类号: C01B35/04 ; C23C14/24 ; B05D3/00 ; H01L39/00 ; H01L39/24 ; H01B13/00
摘要:
A magnesium boride thin film having a B-rich composition represented by the general formula of MgBx (x=1 to 10) and a superconducting transition temperature of 10K or more has superior crystallinity and orientation and is used as a superconducting material. This thin film is formed by maintaining a film forming environment in a high vacuum atmosphere of 4×10−5 Pa or less, and simultaneously depositing Mg and B on a substrate maintained at a temperature of 200° C. or less so as to grow the film at a growth rate of 0.05 nm/sec or less. It is preferable to supply an Mg vapor and a B vapor into the film forming environment at an Mg/B molar ratio of 1/1 to 12/1.
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