发明授权
- 专利标题： Light-emitting semiconductor device
- 专利标题（中）： 发光半导体器件
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申请号： US12313123申请日： 2008-11-17
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公开(公告)号： US07985964B2公开(公告)日： 2011-07-26
- 发明人: Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya
- 申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya
- 申请人地址： JP Nagoya-shi, Aichi-ken
- 专利权人： Meijo University
- 当前专利权人： Meijo University
- 当前专利权人地址： JP Nagoya-shi, Aichi-ken
- 代理机构： Yokoi & Co., U.S.A., Inc.
- 代理商 Toshiyuki Yokoi
- 优先权： JP2006-142853 20060523
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L31/00
摘要：
The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.
公开/授权文献
- US20090065763A1 LIGHT-EMITTING SEMICONDUCTOR DEVICE 公开/授权日：2009-03-12
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