发明授权
- 专利标题： III-nitride semiconductor field effect transistor
- 专利标题（中）： III族氮化物半导体场效应晶体管
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申请号： US12528578申请日： 2008-02-26
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公开(公告)号： US07985984B2公开(公告)日： 2011-07-26
- 发明人: Tatsuo Nakayama , Yuji Ando , Hironobu Miyamoto , Yasuhiro Okamoto , Takashi Inoue
- 申请人： Tatsuo Nakayama , Yuji Ando , Hironobu Miyamoto , Yasuhiro Okamoto , Takashi Inoue
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-049350 20070228
- 国际申请： PCT/JP2008/053223 WO 20080226
- 国际公布： WO2008/105378 WO 20080904
- 主分类号： H01L29/778
- IPC分类号： H01L29/778
摘要：
Provided is a semiconductor device that can reduce the contact resistance, has a small current collapse, and can improve the pinch-off characteristic upon a high-frequency operation. A field effect transistor using a wurtzite (having (0001) as the main plane) type III-nitride semiconductor includes: a substrate (101); an undercoat layer (103) of a first III-nitride semiconductor; and a carrier travel layer (104) of a second III-nitride semiconductor. The undercoat layer (103) (101) and the carrier travel layer (104) is formed on the substrate in this order. The field effect transistor includes source/drain electrodes (105, 106) in ohmic contact, and a gate electrode (107) in Schottky contact directly or via another layer on the carrier travel layer (104). The undercoat layer (103) has an average lattice constant greater than that of the carrier travel layer (104) and a band gap greater than that of the carrier travel layer (104).
公开/授权文献
- US20100038680A1 III-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR 公开/授权日：2010-02-18
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