发明授权
- 专利标题: CMOS image sensor and image signal detecting method thereof
- 专利标题(中): CMOS图像传感器及其图像信号检测方法
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申请号: US11874404申请日: 2007-10-18
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公开(公告)号: US07985993B2公开(公告)日: 2011-07-26
- 发明人: Dong-Myung Lee , Dong-Soo Kim , Gun-Hee Han , Seog-Heon Ham
- 申请人: Dong-Myung Lee , Dong-Soo Kim , Gun-Hee Han , Seog-Heon Ham
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2006-0111800 20061113
- 主分类号: H01L27/00
- IPC分类号: H01L27/00
摘要:
A complementary metal oxide semiconductor (CMOS) image sensor includes a photodiode, a switch and a comparator. The switch transfers a sensing signal to a sensing node from the photodiode. The comparator, which is directly connected to the sensing node, compares the sensing signal of the sensing node with a reference signal. The comparator outputs a signal corresponding to a voltage difference between the sensing signal and the reference signal.
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