发明授权
- 专利标题： Short circuit limiting in power semiconductor devices
- 专利标题（中）： 功率半导体器件的短路限制
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申请号： US11829311申请日： 2007-07-27
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公开(公告)号： US07986005B2公开(公告)日： 2011-07-26
- 发明人: Oliver Schilling , Frank Pfirsch
- 申请人： Oliver Schilling , Frank Pfirsch
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria Ag
- 当前专利权人： Infineon Technologies Austria Ag
- 当前专利权人地址： AT Villach
- 代理机构： Dickstein Shapiro LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A power semiconductor device includes a semiconductor body. The semiconductor body includes a body region of a first conductivity type for forming therein a conductive channel of a second conductivity type; a gate electrode arranged next to the body region; and a floating electrode arranged between the gate electrode and the body region.
公开/授权文献
- US20090026532A1 SHORT CIRCUIT LIMITING IN POWER SEMICONDUCTOR DEVICES 公开/授权日：2009-01-29
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