发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11639410申请日: 2006-12-15
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公开(公告)号: US07986021B2公开(公告)日: 2011-07-26
- 发明人: Kazuo Okada , Katsuhiko Kitagawa , Takashi Noma , Shigeki Otsuka , Hiroshi Yamada , Shinzo Ishibe , Yuichi Morita , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
- 申请人: Kazuo Okada , Katsuhiko Kitagawa , Takashi Noma , Shigeki Otsuka , Hiroshi Yamada , Shinzo Ishibe , Yuichi Morita , Noboru Okubo , Hiroyuki Shinogi , Mitsuru Okigawa
- 申请人地址: JP Moriguchi-shi JP Gunma
- 专利权人: Sanyo Electric Co., Ltd.,Sanyo Semiconductor Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.,Sanyo Semiconductor Co., Ltd.
- 当前专利权人地址: JP Moriguchi-shi JP Gunma
- 代理机构: Morrison & Foerster LLP
- 优先权: JP2005-361706 20051215; JP2006-310623 20061116
- 主分类号: H01L31/0232
- IPC分类号: H01L31/0232
摘要:
The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.
公开/授权文献
- US20070145420A1 Semiconductor device 公开/授权日:2007-06-28
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