发明授权
- 专利标题： Immersion lithography apparatus and methods
- 专利标题（中）： 浸渍光刻设备及方法
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申请号： US11427421申请日： 2006-06-29
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公开(公告)号： US07986395B2公开(公告)日： 2011-07-26
- 发明人: Ching-Yu Chang , Burn Jeng Lin , Chin-Hsiang Lin
- 申请人： Ching-Yu Chang , Burn Jeng Lin , Chin-Hsiang Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： G03B27/42
- IPC分类号： G03B27/42
摘要：
A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; and a cleaning module adapted to clean the lithography apparatus. The cleaning module is selected from the group consisting of an ultrasonic unit, a scrubber, a fluid jet, an electrostatic cleaner, and combinations thereof.
公开/授权文献
- US20070091287A1 IMMERSION LITHOGRAPHY APPARATUS AND METHODS 公开/授权日：2007-04-26
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