发明授权
- 专利标题: Apparatuses and methods for maskless mesoscale material deposition
- 专利标题(中): 无掩模中尺度材料沉积的设备和方法
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申请号: US12349279申请日: 2009-01-06
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公开(公告)号: US07987813B2公开(公告)日: 2011-08-02
- 发明人: Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
- 申请人: Michael J. Renn , Bruce H. King , Marcelino Essien , Gregory J. Marquez , Manampathy G. Giridharan , Jyh-Cherng Sheu
- 申请人地址: US NM Albuquerque
- 专利权人: Optomec, Inc.
- 当前专利权人: Optomec, Inc.
- 当前专利权人地址: US NM Albuquerque
- 代理机构: Peacock Myers, P.C.
- 代理商 Philip D. Askenazy
- 主分类号: B05C11/00
- IPC分类号: B05C11/00 ; B05C11/06 ; B05B1/08 ; B05B5/00
摘要:
Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.
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