Provided are a method of fabricating a semiconductor device and synchronous pulse plasma etching equipment for the same. The method includes outputting a first radio frequency (RF) power and a control signal and outputting a second RF power. The first RF power is pulse-width modulated to have a first frequency and a first duty ratio, and is applied to a first electrode in a plasma etching chamber. The control signal includes information on a phase of the first RF power. The second RF power is pulse-width modulated to have the first frequency and a second duty ratio smaller than the first duty ratio, is applied to a corresponding second electrode among second electrodes in the plasma etching chamber, and is supplied for a time section in which the first RF power is supplied.