发明授权
US07989343B2 Method of depositing a uniform metal seed layer over a plurality of recessed semiconductor features
有权
在多个凹入的半导体特征上沉积均匀的金属种子层的方法
- 专利标题： Method of depositing a uniform metal seed layer over a plurality of recessed semiconductor features
- 专利标题（中）： 在多个凹入的半导体特征上沉积均匀的金属种子层的方法
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申请号： US12802701申请日： 2010-06-11
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公开(公告)号： US07989343B2公开(公告)日： 2011-08-02
- 发明人: Tony Chiang , Gongda Yao , Peijun Ding , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara , Zheng Xu , Hong Zhang
- 申请人： Tony Chiang , Gongda Yao , Peijun Ding , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara , Zheng Xu , Hong Zhang
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理商 Shirley L. Church ESQ
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
We disclose a method of depositing a metal seed layer on a wafer substrate comprising a plurality of recessed device features. The method comprises depositing a first portion of a copper seed layer on a wafer substrate without excessive build-up on the openings of each of the plurality of recessed device features, while obtaining bottom coverage without substantial sputtering of the bottom surface. The method also comprises depositing a second portion of the metal seed layer while redistributing at least a portion of the bottom coverage material to the sidewalls of each recessed device feature, to provide a uniform seed layer coverage over the interior surface of the recessed device features.