Invention Grant
- Patent Title: Fin transistor
- Patent Title (中): 鳍晶体管
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Application No.: US12335701Application Date: 2008-12-16
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Publication No.: US07989856B2Publication Date: 2011-08-02
- Inventor: Masakazu Goto , Nobutoshi Aoki , Takashi Izumida , Kimitoshi Okano , Satoshi Inaba , Ichiro Mizushima
- Applicant: Masakazu Goto , Nobutoshi Aoki , Takashi Izumida , Kimitoshi Okano , Satoshi Inaba , Ichiro Mizushima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-324408 20071217
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A fin transistor includes: a substrate; a plurality of semiconductor fins formed on the substrate; a gate electrode covering a channel region of the semiconductor fins; and a member as a stress source for the semiconductor fins included in a region of the gate electrode and the region provided between the semiconductor fins, and the member being made of a different material from the gate electrode.
Public/Granted literature
- US20090152623A1 FIN TRANSISTOR Public/Granted day:2009-06-18
Information query
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