Invention Grant
- Patent Title: Trench MOSFET with trenched floating gates as termination
- Patent Title (中): 沟槽MOSFET，沟槽浮动栅极作为端接
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Application No.: US12591467Application Date: 2009-11-20
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Publication No.: US07989887B2Publication Date: 2011-08-02
- Inventor: Fu-Yuan Hsieh
- Applicant: Fu-Yuan Hsieh
- Applicant Address: TW Taipei
- Assignee: Force Mos Technology Co., Ltd.
- Current Assignee: Force Mos Technology Co., Ltd.
- Current Assignee Address: TW Taipei
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A trench MOSFET comprising a plurality of transistor cells with a plurality of wide trenched floating gates as termination region is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction depth of body regions in termination area. Each body region between two adjacent said trenched floating gates has floating voltage.
Public/Granted literature
- US20110121386A1 Trench MOSFET with trenched floating gates as termination Public/Granted day:2011-05-26
Information query
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