发明授权
US07989955B2 Semiconductor device, electronic device, and method of producing semiconductor device
有权
半导体装置，电子装置以及半导体装置的制造方法
- 专利标题： Semiconductor device, electronic device, and method of producing semiconductor device
- 专利标题（中）： 半导体装置，电子装置以及半导体装置的制造方法
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申请号： US12108718申请日： 2008-04-24
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公开(公告)号： US07989955B2公开(公告)日： 2011-08-02
- 发明人: Iwao Yagi
- 申请人： Iwao Yagi
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： SNR Denton US LLP
- 优先权： JP2007-116372 20070426
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A semiconductor device includes a first insulating film that includes a first opening reaching a substrate and that is provided on the substrate, a second insulating film that includes a second opening reaching the substrate through the first opening of the first insulating film and that covers the first insulating film, and a conductive pattern that is provided on the second insulating film so as to be in contact with the substrate through the second opening of the second insulating film.
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