发明授权
- 专利标题： Method of forming crystallized silicon and method of fabricating thin film transistor and liquid crystal display using the same
- 专利标题（中）： 形成结晶硅的方法和使用其制造薄膜晶体管和液晶显示器的方法
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申请号： US12412682申请日： 2009-03-27
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公开(公告)号： US07993994B2公开(公告)日： 2011-08-09
- 发明人: Tae-Hyung Hwang , Hyun-Jae Kim , Do-Kyung Kim , Woong-Hee Jeong , Choong-Hee Lee , Tae-Hun Jung
- 申请人： Tae-Hyung Hwang , Hyun-Jae Kim , Do-Kyung Kim , Woong-Hee Jeong , Choong-Hee Lee , Tae-Hun Jung
- 申请人地址： KR KR
- 专利权人： Samsung Electronics Co., Ltd.,Industry-Academic Cooperation Foundation, Younsei University
- 当前专利权人： Samsung Electronics Co., Ltd.,Industry-Academic Cooperation Foundation, Younsei University
- 当前专利权人地址： KR KR
- 代理机构： Innovation Counsel LLP
- 优先权： KR2008-89975 20080911
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84 ; H01L21/20 ; H01L21/36
摘要：
A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.
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