发明授权
US07994029B2 Method for patterning crystalline indium tin oxide using femtosecond laser
有权
使用飞秒激光图案化结晶铟锡氧化物的方法
- 专利标题： Method for patterning crystalline indium tin oxide using femtosecond laser
- 专利标题（中）： 使用飞秒激光图案化结晶铟锡氧化物的方法
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申请号： US12358046申请日： 2009-01-22
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公开(公告)号： US07994029B2公开(公告)日： 2011-08-09
- 发明人: Chung-Wei Cheng , Costas P. Grigoropoulos , David Jen Hwang , Moosung Kim
- 申请人： Chung-Wei Cheng , Costas P. Grigoropoulos , David Jen Hwang , Moosung Kim
- 申请人地址： TW Hsin-Chu US CA Oakland
- 专利权人： Industrial Technology Research Institute,The Regents of the University of California
- 当前专利权人： Industrial Technology Research Institute,The Regents of the University of California
- 当前专利权人地址： TW Hsin-Chu US CA Oakland
- 代理机构： WPAT, PC
- 代理商 Justin King
- 优先权： TW97107130A 20080229
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36 ; H01L21/44
摘要：
A method for patterning crystalline indium tin oxide (ITO) using femtosecond laser is disclosed, which comprises steps of: (a) providing a substrate with an amorphous ITO layer thereon; (b) transferring the amorphous ITO layer in a predetermined area into a crystalline ITO layer by emitting a femtosecond laser beam to the amorphous ITO layer in the predetermined area; and (c) removing the amorphous ITO layer on the substrate using an etching solution.
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